Epitaxial sapphire (Al2O3) wafers, 2 to 12 inch sizes, for MOCVD epitaxial growth of GaN, GaAs, InGaN, AlGaAs, and InGaAs films

Epitaxial Sapphire (Al2O3) Wafers:

Epitaxial sapphire wafers are sapphire (Al2O3) substrates with a compound semiconductor thin film grown on the surface by MOCVD (Metal-Organic Chemical Vapor Deposition). Available epitaxial layers include GaN, GaAs, InGaN, AlGaAs, and InGaAs, among others.

We offer epitaxial sapphire wafers in sizes from 2 to 12 inches. Custom specifications are available upon request — please contact us to discuss your requirements.

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