
Gallium Oxide Sputtering Target
Gallium oxide (Ga₂O₃) sputtering targets are valued for their wide bandgap and exceptional thermal stability, which make them ideal for advanced power electronic applications. Sputtered Ga₂O₃ films are widely utilized in high-voltage and high-temperature devices, such as transistors and diodes, due to their high breakdown voltage and efficient thermal conductivity. The material’s ability to function as a wide bandgap semiconductor also supports its use in ultraviolet photodetectors and transparent conductive oxides. Furthermore, the formation of different polymorphs of Ga₂O₃ enables tunable electronic properties, expanding its versatility in cutting-edge electronic and optoelectronic devices.
| Name | Gallium Oxide |
| Symbol | Ga2O3 |
| Melting point | 1,900 ℃ |
| Density | 5.32 g/cm3 |
| Purity | 99.99% |
| Shape | Disc, Planar |

