Copper-Manganese Sputtering Target

Copper-manganese (CuMn) is a dilute copper alloy in which manganese readily segregates to interfaces during thermal annealing. Sputtered CuMn films combine the high electrical conductivity of copper with the interfacial reactivity of manganese, a behavior that has been extensively studied in semiconductor interconnect metallization research.

Sputtered CuMn thin films are used to form self-forming diffusion barrier layers in copper interconnect technology. Upon annealing, manganese segregates to the interface with the surrounding dielectric and reacts to form an ultrathin MnSixOy barrier that suppresses copper diffusion while preserving low interconnect resistance. This self-forming barrier approach, established in copper interconnect research, has been widely studied as a route to thinner, lower-resistance barriers for advanced interconnect nodes.

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