Cobalt Silicide Sputtering Target
Cobalt silicide (CoSi2) is valued for its low electrical resistivity, excellent chemical stability, and comparatively low formation temperature. These properties have made it one of the standard materials for forming low-resistance ohmic contacts in ultra-large-scale integration (ULSI) since the 1990s.
Sputtered cobalt films are a key step in the cobalt salicide (self-aligned silicide) process, where the sputtered Co reacts with underlying silicon at the source, drain and gate regions of a transistor to form CoSi2 contacts, significantly reducing contact and sheet resistance in CMOS devices. CoSi2 sputtering targets are also used directly for depositing the silicide phase in thin-film and coating research applications.
| Name | Cobalt Silicide |
| Composition | CoSi2 (stoichiometric, or as requested) |
| Purity | 99.9% / higher grades available on request |
| Shape | Disc, Plate |