Boron Nitride Sputtering Target

Boron nitride (BN), particularly in its hexagonal form (h-BN), is a layered material with a graphene-like honeycomb structure, an ultra-wide bandgap of around 6 eV, high thermal conductivity, and a low dielectric constant. Sputtered h-BN thin films retain these properties, with surfaces free of dangling bonds well suited to interfacing with other 2D materials.

Sputtered h-BN thin films are used as ultrathin dielectric and gate-insulator layers in graphene-based and other two-dimensional material devices, as well as in deep-ultraviolet (DUV) photodetectors that exploit the material’s wide bandgap. Additional applications include on-chip capacitor and insulator layers for integrated circuits and solid lubricant coatings.

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