Tantalum Nitride Sputtering Target
Tantalum nitride (TaN) has a very high melting point of around 2950°C, is thermodynamically stable with respect to copper, and forms a dense microstructure with good adhesion to silicon and silicon dioxide. Unlike titanium nitride, sputtered TaN films show relatively consistent stoichiometry and microstructure across a range of deposition conditions.
Sputtered TaN thin films, typically deposited by reactive magnetron sputtering of a tantalum target in an argon-nitrogen atmosphere, are one of the established diffusion barrier materials for copper interconnect technology in integrated circuits, preventing copper migration into the surrounding dielectric while maintaining electrical stability at temperatures up to around 750°C. TaN is also used as a thin-film resistor material and as a hard, wear-resistant tribological coating.
| Name | Tantalum Nitride |
| Symbol | TaN |
| Purity | 99.9% / higher grades available on request |
| Shape | Disc, Plate |