Copper Aluminium Oxide Sputtering Target

Copper aluminium oxide (CuAlO2) is a delafossite-structured oxide, notable as the first p-type transparent conducting oxide to be reported, in 1997. Sputtered CuAlO2 thin films combine a wide bandgap of over 3 eV with p-type electrical conductivity, a rare combination among oxide semiconductors that are otherwise predominantly n-type.

Sputtered CuAlO2 thin films, deposited by reactive DC or RF magnetron sputtering, are studied for all-transparent p-n junction devices, hole-transport and hole-collecting layers in optoelectronic devices and dye-sensitized solar cells, and as a candidate p-type channel material for transparent thin-film transistors, complementing well-established n-type transparent conducting oxides such as ITO and AZO.

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