Ga2O3 Gallium Oxide

Gallium Oxide Sputtering Target

Gallium oxide (Ga₂O₃) sputtering targets are valued for their wide bandgap and exceptional thermal stability, which make them ideal for advanced power electronic applications. Sputtered Ga₂O₃ films are widely utilized in high-voltage and high-temperature devices, such as transistors and diodes, due to their high breakdown voltage and efficient thermal conductivity. The material’s ability to function as a wide bandgap semiconductor also supports its use in ultraviolet photodetectors and transparent conductive oxides. Furthermore, the formation of different polymorphs of Ga₂O₃ enables tunable electronic properties, expanding its versatility in cutting-edge electronic and optoelectronic devices.

Name Gallium Oxide
Symbol Ga2O3
Melting point 1,900 ℃
Density 5.32 g/cm3
Purity 99.99%
Shape Disc, Planar

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