Hafnium Zirconium Oxide Sputtering Target

Hafnium zirconium oxide (HfZrO₂) sputtering targets, available in compositions such as Hf₀.₇₅Zr₀.₂₅O₂ and Hf₀.₆Zr₀.₄O₂, are recognized for their excellent dielectric properties and thermal stability. Sputtered Hf₀.₇₅Zr₀.₂₅O₂ films exhibit superior thermal stability and are well-suited for high-k dielectric applications in advanced semiconductor devices, such as MOSFET gate insulators. On the other hand, Hf₀.₆Zr₀.₄O₂ films demonstrate enhanced ferroelectric properties and are particularly useful in non-volatile memory technologies like FeRAM, as well as high-performance capacitors. Both compositions contribute to reducing leakage currents in integrated circuits, facilitating the development of more efficient and reliable electronic devices. Their mechanical robustness and adaptability also make them suitable for protective coatings and optical applications.

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