IWO Tungsten doped Indium Oxide

Tungsten doped Indium Oxide Sputtering Target

Indium tungsten oxide (IWO) sputtering targets are highly valued for their unique combination of high electrical conductivity and optical transparency, offering an alternative to indium tin oxide (ITO) with enhanced performance in specific applications. Sputtered IWO films are commonly employed as transparent conductive layers in electronic devices such as flat-panel displays and photovoltaic cells. The material demonstrates excellent thermal stability and can be deposited at lower temperatures, making it particularly suitable for heat-sensitive substrates. Additionally, IWO’s electrochromic properties are being explored for advanced applications, including smart windows and devices requiring variable optical characteristics.

Name Tungsten doped Indium Oxide
Symbol IWO (In2O3/WO3 = 97/3wt%)
Melting point 1,980 ℃
Purity 99.99%
Shape Disc, Planar

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