Manganese-Gallium Sputtering Target
Manganese-gallium (MnGa) alloy sputtering targets are notable for their magnetic properties, particularly their potential applications in spintronic devices. This alloy exhibits strong ferromagnetism and favorable magnetic anisotropy, making it suitable for use in components such as magnetic tunnel junctions (MTJs) and spin filters. MnGa films are critical for advanced memory technologies, including magnetic random-access memory (MRAM), which utilize electron spin for data storage and processing. The combination of manganese and gallium enhances the magnetic performance and thermal stability of the films, supporting the development of next-generation electronic devices with enhanced reliability and efficiency.
Name | Manganese-Gallium alloy |
Composition | MnGa:50:50 at%, 60:40 at% or as requested |
Purity | 99.9% |
Shape | Disc, Planar |