Silicon Carbide Sputtering Target

Silicon carbide (SiC) sputtering targets are recognized for their excellent thermal conductivity, high hardness, and wide bandgap semiconductor properties. Sputtered SiC films are commonly used in high-power and high-temperature electronic devices, such as power transistors and diodes. The material offers excellent chemical stability and can withstand harsh environments, making it suitable for automotive and aerospace applications. Additionally, SiC is being studied for potential use in optoelectronic devices and as a substrate for heteroepitaxial growth of other semiconductor materials.

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