Titanium Silicide Sputtering Target

Titanium silicide is one of the original self-aligned silicide (salicide) materials adopted by the semiconductor industry, valued for its low electrical resistivity as a contact material. In practice, the stable, low-resistivity phase most widely used is TiSi2, formed by reacting sputtered titanium with underlying silicon.

Sputtered titanium films are used in the titanium salicide process, where they react with silicon at source, drain and gate regions to form low-resistance TiSi2 contacts. Although later CMOS generations largely moved to CoSi2 and NiSi to overcome titanium silicide’s linewidth-dependent resistivity increase, TiSi2 remains an important reference material in silicide contact research and legacy process technology.

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