LaAlO3 monocrystal substrate
Lanthanum aluminate (LaAlO₃) – LAO is a versatile material known for its perovskite structure and rhombohedral crystal system at room temperature. It boasts excellent thermal stability, a high melting point, and strong chemical resistance. These properties make it suitable for various applications. Additionally, LaAlO₃ is widely used as a substrate for thin film growth in the fabrication of electronic devices, especially in high-temperature superconductors and oxide electronics.
For inquiry, please give us the following information:
- Size with tolerance (Diameter / Thickness )
- Orientation
- Polishing Side (SSP or DSP )
- Quantity
Typical Properties
| Crystal Structure | Cubic at >435°C a=3.821Å Rhombohedral at 25°C a=3.79Å c=13.11Å |
| Growth Method | CZ |
| Density | 6.52 g/cm3 |
| Melt Point | 2080 °C |
| Hardness | 6 (Mohn) |
| Thermal Expansion | 10 x (10-6/°C) |
| Dielectric Constant | ～25 |
| Loss Tangent at 10 GHz | ～3 x 10-4@300K, ～0.6 x 10-4@77K |
| Color and Appearance | Tan to Brown based on annealing condition Visible twins on polished substrate. |
| Chemical Stability | Insoluble in mineral acids at 25°C and soluble in H3PO3 at >150°C |
